TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters a

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PHI

PHI

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

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ISC

无锡固电

60V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V, ID@20A

文件：454.1 Kbytes 页数：6 Pages

PANJIT

強茂

Superior Avalanche Rugged Technology

文件：897.46 Kbytes 页数：9 Pages

SEMIHOW

N-Channel MOSFET uses advanced trench technology

文件：2.23496 Mbytes 页数：5 Pages

DOINGTER

杜因特

100PerCent Avalanche Tested

文件：847.14 Kbytes 页数：7 Pages

SEMIHOW