Dual N-channel TrenchMOS transistor

GENERAL DESCRIPTION Dual N-channel enhancement mode field-effect transistor in a plastic envelope using ’trench’ technology. FEATURES • Dual device • Low on-state resistance • Fast switching • Low profile surface mount package Applications:- • Motor and relay drivers • d.c. to d.c. conver

文件：79.89 Kbytes 页数：7 Pages

PHI

飞利浦

Dual N-channel TrenchMOS standard level FET

1.1 General description Dual standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefit

文件：296.36 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PHKD3NQ10T - Dual N-channel TrenchMOS standard level FET

Dual N-channel TrenchMOS standard level FET - Dual standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. ·Low conduction losses due to low on-state resistance\n·Suitable for high frequency applications due to fast switching characteristics\n·Suitable for use in compact designs due to low profile;

Nexperia

安世

NEXPERIA
con

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

上传：北京天阳诚业科贸有限公司

JST
N/A

JST

JST集团

上传：深圳市云泰半导体科技有限公司二部