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PHB33NQ20T中文资料恩XP数据手册PDF规格书
PHB33NQ20T规格书详情
General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
Features and benefits
■ Higher operating power due to low thermal resistance
■ Low conduction losses due to low on-state resistance
■ Simple gate drive required due to low gate charge
■ Suitable for high frequency applications due to fast switching characteristics
Applications
■ DC-to-DC primary side switching
产品属性
- 型号：
PHB33NQ20T
- 功能描述：
MOSFET TRENCHMOS
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
恩XP |
22+ |
SOT-263 |
100000 |
代理渠道/只做原装/可含税 |
询价 | ||
恩XP |
24+ |
NA/ |
35615 |
原厂直销,现货供应,账期支持! |
询价 | ||
NEXPERIA/安世 |
24+ |
原厂原封可拆样 |
65258 |
百分百原装现货,实单必成 |
询价 | ||
恩XP |
2023+ |
SMD |
4278 |
安罗世纪电子只做原装正品货 |
询价 | ||
PHI |
24+ |
TO-263 |
20000 |
只做原厂渠道 可追溯货源 |
询价 | ||
恩XP |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
询价 | |||
PH |
24+ |
SOT404TO-263D2PAK |
8866 |
询价 | |||
恩XP |
24+ |
TO-263 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
询价 | ||
NEXPERIA/安世 |
22+ |
SOT404 |
10990 |
原装正品 |
询价 | ||
恩XP |
23+ |
TO2633 D2Pak (2 Leads + Tab) T |
9000 |
原装正品，支持实单 |
询价 |
