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PESD3V3L2BT

Marking:V3;Package:SOT23;Low capacitance double bidirectional ESD protection diodes in SOT23

1.1Generaldescription LowcapacitancedoublebidirectionalElectroStaticDischarge(ESD)protectiondiodesina SOT23smallSurfaceMountedDevice(SMD)plasticpackagedesignedtoprotecttwo signallinesfromthedamagecausedbyESDandothertransients. 1.2Features nESDprotectiono

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PESD3V3L2BT

Marking:V3T;Package:SOT-23;400 peak pulse power (tp =8/20μs)

Features 400peakpulsepower(tp=8/20μs) Bidirectionalconfigurations Solid-statesilicon-avalanchetechnology Lowclampingvoltage Lowleakagecurrent IEC61000-4-2±30kVcontact±30kVair IEC61000-4-4(EFT)40A(5/50ns) IEC61000-4-5(Lightning)24A(8/20μs) Applications Dataline

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

PESD3V3L2BT-Q

Marking:V3;Package:SOT23;Low capacitance double bidirectional ESD protection diode in SOT23

1.Generaldescription LowcapacitancedoublebidirectionalElectroStaticDischarge(ESD)protectiondiodeinaSOT23 smallSurfaceMountedDevice(SMD)plasticpackagedesignedtoprotecttwosignallinesfromthe damagecausedbyESDandothertransients. 2.Featuresandbenefits •ESDprot

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PESD3V3L2UM

Marking:F2;Package:SOT883;Low capacitance double ESD protection diode

FEATURES ·Uni-directionalESDprotectionoftwolinesor bi-directionalESDprotectionofoneline ·Reversestandoffvoltage3.3and5V ·Lowdiodecapacitance ·Ultralowleakagecurrent ·LeadlessultrasmallSOT883surfacemountpackage (1´0.6´0.5mm) ·Boardspace1.17mm2(appr

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PESD3V3L2UM

Marking:F2;Package:SOT-883;Uni-directional ESD protection of two lines or bi-directional ESD protection of one line

FEATURES•Uni-directionalESDprotectionoftwolinesorbi-directionalESDprotectionofoneline•Reversestandoffvoltage3.3and5V•Lowdiodecapacitance•Ultralowleakagecurrent•LeadlessultrasmallSOT883surfacemountpackage(1×0.6×0.5mm)•Boardspace1.17mm2(approx.10ofSOT23)•ESDpro

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

PESD3V3L2UM-TP

2-Line Ultra Low Capacitance TVS Diode

Features Uitrasmalpackage:1.0x0.6x0.5mm Ultralowcapacitance:0.3pFtypical(1/0-1/0) Ultralowleakage:nAlevel Lowoperatingvoltage:3.3V Lowclampingvoltage 3-pinleadlesspackage Upto2-ineprotects Complieswithfollowingstandards: ~IEC610004-2(ESD)immunitytest Ardisc

TECHPUBLICTECH PUBLIC Electronics co LTD

台舟电子台舟电子股份有限公司

PESD3V3L4BHC

Marking:L4;Package:SOT8006;4-fold bidirectional ESD protection array

1.Generaldescription 4-foldbidirectionalElectroStaticDischarge(ESD)protectionarraydesignedtoprotectuptofour linesfromthedamagecausedbyESDandothertransients. ThedeviceishousedinaleadlessextremelythinsmallDFN1308-6(SOT8006)Surface-Mounted Device(SMD)plasticp

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PESD3V3L4UF

Marking:A5;Package:SOT886;Low capacitance unidirectional quadruple ESD protection diode arrays

1.1Generaldescription LowcapacitanceunidirectionalquadrupleElectroStaticDischarge(ESD)protectiondiode arraysinsmallSurface-MountedDevice(SMD)plasticpackagesdesignedtoprotectupto foursignallinesfromthedamagecausedbyESDandothertransients. Table1.Productoverv

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PESD3V3L4UF

Marking:A5;Package:SOT886;Low capacitance unidirectional quadruple ESD protection diode arrays

1.1Generaldescription LowcapacitanceunidirectionalquadrupleElectroStaticDischarge(ESD)protectiondiode arraysinsmallSurface-MountedDevice(SMD)plasticpackagesdesignedtoprotectupto foursignallinesfromthedamagecausedbyESDandothertransients. 1.2Features 1.3Applic

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PESD3V3L4UG

Marking:F05;Package:SOT-353;BI-DIRECTIONAL TVS DIODE ARRAY FOR ESD AND LATCH-UP PROTECTION

Features Lowleakagecurrent Operatingvoltage:3.3V Lowclampingvoltage JEDECSOT-353package Complieswithfollowingstandards: –IEC61000-4-2(ESD)immunitytest Airdischarge:±30kV Contactdischarge:±30kV –IEC61000-4-5(Lightning)8A(8/20μs) RoHSCompliant Applications

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯电子上海雷卯电子科技有限公司

详细参数

  • 型号:

    PESD3V3

  • 功能描述:

    TVS 二极管 - 瞬态电压抑制器 3.3V BIDIRECTION ESD

  • RoHS:

  • 制造商:

    Vishay Semiconductors

  • 极性:

    Bidirectional

  • 击穿电压:

    58.9 V

  • 钳位电压:

    77.4 V

  • 峰值浪涌电流:

    38.8 A

  • 封装/箱体:

    DO-214AB

  • 最小工作温度:

    - 55 C

  • 最大工作温度:

    + 150 C

供应商型号品牌批号封装库存备注价格
恩XP
SOT666
1200
原装长期供货!
询价
PHI
23+
SOD523
12300
询价
恩XP
17+
SOT663
6200
100%原装正品现货
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DISCRETE
3000
PH3
36000
询价
恩XP
2020+
SOT-23
15311
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
恩XP
24+
SOT-353
5989
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
恩XP
16+
NA
8800
诚信经营
询价
恩XP
2016+
SOD-523
52321
只做原装,假一罚十,公司可开17%增值税发票!
询价
恩XP
24+
6000
询价
恩XP
24+
SOT23-6
5000
全现原装公司现货
询价
更多PESD3V3供应商 更新时间2025-7-24 16:20:00