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PESD3V3L4UG

Marking:A6;Package:SOT353;Low capacitance unidirectional quadruple ESD protection diode arrays

1.1Generaldescription LowcapacitanceunidirectionalquadrupleElectroStaticDischarge(ESD)protectiondiode arraysinsmallSurface-MountedDevice(SMD)plasticpackagesdesignedtoprotectupto foursignallinesfromthedamagecausedbyESDandothertransients. Table1.Productoverv

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PESD3V3L4UG

Marking:L1;Package:SOT353;Low capacitance unidirectional quadruple ESD protection diode arrays

1.1Generaldescription LowcapacitanceunidirectionalquadrupleElectroStaticDischarge(ESD)protectiondiode arraysinsmallSurface-MountedDevice(SMD)plasticpackagesdesignedtoprotectupto foursignallinesfromthedamagecausedbyESDandothertransients. 1.2Features 1.3Applic

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PESD3V3L4UW

Marking:L1;Package:SOT665;Low capacitance unidirectional quadruple ESD protection diode arrays

1.1Generaldescription LowcapacitanceunidirectionalquadrupleElectroStaticDischarge(ESD)protectiondiode arraysinsmallSurface-MountedDevice(SMD)plasticpackagesdesignedtoprotectupto foursignallinesfromthedamagecausedbyESDandothertransients. Table1.Productoverv

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PESD3V3L4UW

Marking:A2;Package:SOT665;Low capacitance unidirectional quadruple ESD protection diode arrays

1.1Generaldescription LowcapacitanceunidirectionalquadrupleElectroStaticDischarge(ESD)protectiondiode arraysinsmallSurface-MountedDevice(SMD)plasticpackagesdesignedtoprotectupto foursignallinesfromthedamagecausedbyESDandothertransients. 1.2Features 1.3Applic

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PESD3V3L5UF

Marking:A1;Package:SOT886;Low capacitance unidirectional fivefold ESD protection diode arrays

1.1Generaldescription LowcapacitanceunidirectionalfivefoldElectroStaticDischarge(ESD)protectiondiode arraysinsmallSurface-MountedDevice(SMD)plasticpackagesdesignedtoprotectupto fiveunidirectionalsignallinesfromthedamagecausedbyESDandothertransients. 1.2Featur

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PESD3V3L5UF

Marking:A1;Package:SOT-886;ESD protection of up to five lines

Description Lowcapacitanceunidirectionalfivefold ElectroStaticDischarge(ESD)protection diodearraysinsmallSurface-Mounted Device(SMD)plasticpackagesdesigned toprotectuptofiveunidirectionalsignal linesfromthedamagecausedbyESD andothertransients. Features ESDpr

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

PESD3V3L5UK

Marking:P4;Package:SOT891;Low capacitance unidirectional fivefold ESD protection diode arrays

1.1Generaldescription LowcapacitanceunidirectionalfivefoldElectroStaticDischarge(ESD)protectiondiode arraysinaleadlessultrasmallSOT891Surface-MountedDevice(SMD)plasticpackage designedtoprotectuptofiveunidirectionalsignallinesfromthedamagecausedbyESD andother

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PESD3V3L5UV

Marking:E1;Package:SOT666;Low capacitance unidirectional fivefold ESD protection diode arrays

1.1Generaldescription LowcapacitanceunidirectionalfivefoldElectroStaticDischarge(ESD)protectiondiode arraysinsmallSurface-MountedDevice(SMD)plasticpackagesdesignedtoprotectupto fiveunidirectionalsignallinesfromthedamagecausedbyESDandothertransients. 1.2Featur

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PESD3V3L5UV

Marking:K3;Package:SOT-363;ESD protection of up to five lines

Description Lowcapacitanceunidirectionalfivefold ElectroStaticDischarge(ESD)protection diodearraysinsmallSurface-Mounted Device(SMD)plasticpackagesdesigned toprotectuptofiveunidirectionalsignal linesfromthedamagecausedbyESD andothertransients. Features ESDpr

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

PESD3V3L5UY

Marking:K3;Package:SOT363;Low capacitance unidirectional fivefold ESD protection diode arrays

1.1Generaldescription LowcapacitanceunidirectionalfivefoldElectroStaticDischarge(ESD)protectiondiode arraysinsmallSurface-MountedDevice(SMD)plasticpackagesdesignedtoprotectupto fiveunidirectionalsignallinesfromthedamagecausedbyESDandothertransients. 1.2Featur

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

详细参数

  • 型号:

    PESD3V3

  • 功能描述:

    TVS 二极管 - 瞬态电压抑制器 3.3V BIDIRECTION ESD

  • RoHS:

  • 制造商:

    Vishay Semiconductors

  • 极性:

    Bidirectional

  • 击穿电压:

    58.9 V

  • 钳位电压:

    77.4 V

  • 峰值浪涌电流:

    38.8 A

  • 封装/箱体:

    DO-214AB

  • 最小工作温度:

    - 55 C

  • 最大工作温度:

    + 150 C

供应商型号品牌批号封装库存备注价格
恩XP
SOT666
1200
原装长期供货!
询价
PHI
23+
SOD523
12300
询价
恩XP
17+
SOT663
6200
100%原装正品现货
询价
DISCRETE
3000
PH3
36000
询价
恩XP
2020+
SOT-23
15311
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
恩XP
24+
SOT-353
5989
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
恩XP
16+
NA
8800
诚信经营
询价
恩XP
2016+
SOD-523
52321
只做原装,假一罚十,公司可开17%增值税发票!
询价
恩XP
24+
6000
询价
恩XP
24+
SOT23-6
5000
全现原装公司现货
询价
更多PESD3V3供应商 更新时间2025-7-24 16:20:00