PNP 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k廓, R2 = 10 k廓

General description 500 mA PNP Resistor-Equipped Transistors (RET) family. Features ■ Built-in bias resistors ■ Reduces component count ■ Simplifies circuit design ■ Reduces pick and place costs ■ 500 mA output current capability ■ ±10 resistor ratio tolerance Applications ■ Digital app

文件：138.49 Kbytes 页数：10 Pages

恩XP

PNP 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k廓, R2 = 10 k廓

General description 500 mA PNP Resistor-Equipped Transistors (RET) family. Features ■ Built-in bias resistors ■ Reduces component count ■ Simplifies circuit design ■ Reduces pick and place costs ■ 500 mA output current capability ■ ±10 resistor ratio tolerance Applications ■ Digital app

文件：138.49 Kbytes 页数：10 Pages

恩XP

PNP 500 mA, 50 V resistor-equipped transistors

General description 500 mA PNP Resistor-Equipped Transistors (RET) family. Features ■ Built-in bias resistors ■ Reduces component count ■ Simplifies circuit design ■ Reduces pick and place costs ■ 500 mA output current capability ■ ±10 resistor ratio tolerance Applications ■ Digital

文件：75.37 Kbytes 页数：10 Pages

PHI

飞利浦

丝印：7Y；Package：SOT23；50 V, 500 mA PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ

1. General description PNP Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTD123YT 2. Features and benefits • 500 mA output current capability • Reduces pick and place costs • Built-in bias resistors • ±10 re

文件：240.7 Kbytes 页数：9 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ

Features * Built-in bias resistors * Simplifies circuit design * 500 mA output current capability * Reduces component count * Reduces pick and place costs * ±10 resistor ratio tolerance

文件：246.74 Kbytes 页数：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：7Y；Package：SOT23；PNP 500 mA, 50 V resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ

1. General description 500 mA PNP Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTD123YT-Q. 2. Features and benefits • 500 mA output current capability • Reduces pick and place costs • Built-in bias resistors

文件：222.39 Kbytes 页数：10 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

500 mA, 50 V NPN resistor-equipped transistors

Features 500 mA output current capability Built-in bias resistors Simplifies circuit design Reduces component count  10 resistor ratio tolerance AEC-Q101 qualified High temperature applications up to 175 °C

文件：3.59374 Mbytes 页数：27 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：ZK；Package：SOT323；500 mA, 50 V PNP resistor-equipped transistors

Features 500 mA output current capability Built-in bias resistors Simplifies circuit design Reduces component count  10 resistor ratio tolerance AEC-Q101 qualified High temperature applications up to 175 °C

文件：3.64448 Mbytes 页数：27 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：ZK；Package：SOT323；500 mA, 50 V PNP resistor-equipped transistors

General description PNP Resistor-Equipped Transistor (RET) family in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Features ■ 500 mA output current capability ■ ± 10 resistor ratio tolerance ■ Built-in bias resistors ■ AEC-Q101 qualified ■ Simplifies circuit d

文件：3.64552 Mbytes 页数：27 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

Low VCEsat (BISS) transistors

文件：948.33 Kbytes 页数：12 Pages

PHI

飞利浦