丝印：7Y；Package：LFCSP_UD；Single-Channel, 128-/64-/32-Position, Up/Down, ±8% Resistor Tolerance, Nonvolatile Digital Potentiometer

FEATURES Nominal resistor tolerance error: ±8% maximum Wiper current: ±6 mA Rheostat mode temperature coefficient: 35 ppm/°C Low power consumption: 2.5 μA max @ 2.7 V and 125°C Wide bandwidth: 4 MHz (5 kΩ option) Power-on EEPROM refresh time

文件：448.89 Kbytes 页数：24 Pages

AD

亚德诺

丝印：7Y；Package：LFCSP_UD；Single-Channel, 128-/64-/32-Position, Up/Down, ±8% Resistor Tolerance, Nonvolatile Digital Potentiometer

FEATURES Nominal resistor tolerance error: ±8% maximum Wiper current: ±6 mA Rheostat mode temperature coefficient: 35 ppm/°C Low power consumption: 2.5 μA max @ 2.7 V and 125°C Wide bandwidth: 4 MHz (5 kΩ option) Power-on EEPROM refresh time

文件：448.89 Kbytes 页数：24 Pages

AD

亚德诺

丝印：7Y；Package：SOD882BD；Low-current voltage regulator diodes

1. General description Low-current voltage regulator diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • Total power dissipation: ≤ 365 mW • Tolerance series: approximately ± 5 • Workin

文件：257.07 Kbytes 页数：11 Pages

NEXPERIA

安世

丝印：7Y；Package：DFN1006BD-2；Low-current voltage regulator diodes

1. General description Low-current voltage regulator diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • Total power dissipation: ≤ 365 mW • Tolerance series: approximately ± 5 • Workin

文件：258.089 Kbytes 页数：11 Pages

NEXPERIA

安世

丝印：7Y；Package：SOT23；50 V, 500 mA PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ

1. General description PNP Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTD123YT 2. Features and benefits • 500 mA output current capability • Reduces pick and place costs • Built-in bias resistors • ±10 re

文件：240.7 Kbytes 页数：9 Pages

NEXPERIA

安世

丝印：7Y；Package：SOT23；PNP 500 mA, 50 V resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ

1. General description 500 mA PNP Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTD123YT-Q. 2. Features and benefits • 500 mA output current capability • Reduces pick and place costs • Built-in bias resistors

文件：222.39 Kbytes 页数：10 Pages

NEXPERIA

安世

丝印：7Y；Package：SC-76；Silicon Planar zener diodes

文件：832.45 Kbytes 页数：4 Pages

LEIDITECH

雷卯电子

丝印：7Y；Package：SOD-123FL；SURFACE MOUNT SILICON ZENER DIODES

文件：131.74 Kbytes 页数：2 Pages

EIC

丝印：7YXYY；Package：TDFN34-16；Boost Converter with USB Power Switch

Features • High Frequency Boost With 5V / 500mA Output Capability From a Single-Cell Lithium-Ion/Polymer Battery • Input Voltage Range: 2.7V to 5V • VOUT1 Adjustable • >90 Efficiency • 2MHz Switching Frequency • True Load Disconnect • Load Switch With Programmable Current Limit • Over-Te

文件：1.31088 Mbytes 页数：18 Pages

SKYWORKS

思佳讯

丝印：7Y5；Package：SOT-89；Voltage regulator diodes

DESCRIPTION Medium-power voltage regulator diodes in a SOT89 plastic SMD package. FEATURES • Total power dissipation: max. 1 W • Tolerance series: approx. ±5 • Working voltage range: nom. 2.4 to 75 V (E24 range) • Non-repetitive peak reverse power dissipation: max. 40 W. APPLICATIONS • G

文件：199.05 Kbytes 页数：10 Pages

恩XP