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AD5115BCPZ10-500R7

Marking:7Y;Package:LFCSP_UD;Single-Channel, 128-/64-/32-Position, Up/Down, ±8% Resistor Tolerance, Nonvolatile Digital Potentiometer

FEATURES Nominalresistortoleranceerror:±8%maximum Wipercurrent:±6mA Rheostatmodetemperaturecoefficient:35ppm/°C Lowpowerconsumption:2.5μAmax@2.7Vand125°C Widebandwidth:4MHz(5kΩoption) Power-onEEPROMrefreshtime

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD5115BCPZ10-RL7

Marking:7Y;Package:LFCSP_UD;Single-Channel, 128-/64-/32-Position, Up/Down, ±8% Resistor Tolerance, Nonvolatile Digital Potentiometer

FEATURES Nominalresistortoleranceerror:±8%maximum Wipercurrent:±6mA Rheostatmodetemperaturecoefficient:35ppm/°C Lowpowerconsumption:2.5μAmax@2.7Vand125°C Widebandwidth:4MHz(5kΩoption) Power-onEEPROMrefreshtime

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

BZX8850S-C43

Marking:7Y;Package:SOD882BD;Low-current voltage regulator diodes

1.Generaldescription Low-currentvoltageregulatordiodesinanultrasmallSOD882BD(DFN1006BD-2)leadless Surface-MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits •Totalpowerdissipation:≤365mW •Toleranceseries:approximately±5 •Workin

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BZX8850S-C43-Q

Marking:7Y;Package:DFN1006BD-2;Low-current voltage regulator diodes

1.Generaldescription Low-currentvoltageregulatordiodesinanultrasmallSOD882BD(DFN1006BD-2)leadless Surface-MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits •Totalpowerdissipation:≤365mW •Toleranceseries:approximately±5 •Workin

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PDTB123YT

Marking:7Y;Package:SOT23;50 V, 500 mA PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ

1.Generaldescription PNPResistor-EquippedTransistor(RET)inasmallSOT23(TO-236AB)Surface-MountedDevice (SMD)plasticpackage. NPNcomplement:PDTD123YT 2.Featuresandbenefits •500mAoutputcurrentcapability •Reducespickandplacecosts •Built-inbiasresistors •±10re

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PDTB123YT-Q

Marking:7Y;Package:SOT23;PNP 500 mA, 50 V resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ

1.Generaldescription 500mAPNPResistor-EquippedTransistor(RET)inasmallSOT23(TO-236AB)Surface-Mounted Device(SMD)plasticpackage. NPNcomplement:PDTD123YT-Q. 2.Featuresandbenefits •500mAoutputcurrentcapability •Reducespickandplacecosts •Built-inbiasresistors

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

MM3Z7V5B

Marking:7Y;Package:SC-76;Silicon Planar zener diodes

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯电子上海雷卯电子科技有限公司

SMZ2547

Marking:7Y;Package:SOD-123FL;SURFACE MOUNT SILICON ZENER DIODES

EIC

EIC discrete Semiconductors

AAT1275AIRN-0.6-T1

Marking:7YXYY;Package:TDFN34-16;Boost Converter with USB Power Switch

Features •HighFrequencyBoostWith5V/500mAOutput CapabilityFromaSingle-CellLithium-Ion/Polymer Battery •InputVoltageRange:2.7Vto5V •VOUT1Adjustable •>90Efficiency •2MHzSwitchingFrequency •TrueLoadDisconnect •LoadSwitchWithProgrammableCurrentLimit •Over-Te

SKYWORKSSkyworks Solutions Inc.

思佳讯美国思佳讯公司

BZV49-C7V5

Marking:7Y5;Package:SOT-89;Voltage regulator diodes

DESCRIPTION Medium-powervoltageregulatordiodesinaSOT89plasticSMDpackage. FEATURES •Totalpowerdissipation:max.1W •Toleranceseries:approx.±5 •Workingvoltagerange:nom.2.4to75V(E24range) •Non-repetitivepeakreversepowerdissipation:max.40W.

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

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