PNP 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k廓, R2 = 10 k廓

General description 500 mA PNP Resistor-Equipped Transistors (RET) family. Features ■ Built-in bias resistors ■ Reduces component count ■ Simplifies circuit design ■ Reduces pick and place costs ■ 500 mA output current capability ■ ±10 resistor ratio tolerance Applications ■ Digital app

文件：138.49 Kbytes 页数：10 Pages

恩XP

丝印：7Y；Package：SOT23；50 V, 500 mA PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ

1. General description PNP Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTD123YT 2. Features and benefits • 500 mA output current capability • Reduces pick and place costs • Built-in bias resistors • ±10 re

文件：240.7 Kbytes 页数：9 Pages

NEXPERIA

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NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ

Features * Built-in bias resistors * Simplifies circuit design * 500 mA output current capability * Reduces component count * Reduces pick and place costs * ±10 resistor ratio tolerance

文件：246.74 Kbytes 页数：11 Pages

NEXPERIA

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PNP 500 mA, 50 V resistor-equipped transistors

General description 500 mA PNP Resistor-Equipped Transistors (RET) family. Features ■ Built-in bias resistors ■ Reduces component count ■ Simplifies circuit design ■ Reduces pick and place costs ■ 500 mA output current capability ■ ±10 resistor ratio tolerance Applications ■ Digital

文件：75.37 Kbytes 页数：10 Pages

PHI

PHI

Low VCEsat (BISS) transistors

文件：948.33 Kbytes 页数：12 Pages

PHI

PHI

丝印：7Y；Package：SOT23；PNP 500 mA, 50 V resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ

1. General description 500 mA PNP Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTD123YT-Q. 2. Features and benefits • 500 mA output current capability • Reduces pick and place costs • Built-in bias resistors

文件：222.39 Kbytes 页数：10 Pages

NEXPERIA

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PNP 500 mA, 50 V resistor-equipped transistor; R1 = 2.2 kOhm, R2 = 10 kOhm

500 mA PNP Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB\n Surface-Mounted Device (SMD) plastic package.\n NPN complement: PDTD123YT. • 500 mA output current capability\n• Reduces pick and place costs\n• Built-in bias resistors\n• ±10 % resistor ratio tolerance\n• Simplifies circuit design\n• AEC-Q101 qualified\n• Reduces component count;

Nexperia

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PNP 500 mA, 50 V resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ

500 mA PNP Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.\n NPN complement: PDTD123YT-Q. • 500 mA output current capability\n• Reduces pick and place costs\n• Built-in bias resistors\n• ±10 % resistor ratio tolerance\n• Simplifies circuit design\n• Reduces component count\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

Nexperia

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Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 描述：TRANS PREBIAS PNP 50V TO236AB

Nexperia USA Inc.