PDTB123YS

PNP 500 mA, 50 V resistor-equipped transistors

Generaldescription 500mAPNPResistor-EquippedTransistors(RET)family. Features ■Built-inbiasresistors ■Reducescomponentcount ■Simplifiescircuitdesign ■Reducespickandplacecosts ■500mAoutputcurrentcapability ■±10resistorratiotolerance Applications ■Digital

PDTB123YS

PNP 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k廓, R2 = 10 k廓

Generaldescription 500mAPNPResistor-EquippedTransistors(RET)family. Features ■Built-inbiasresistors ■Reducescomponentcount ■Simplifiescircuitdesign ■Reducespickandplacecosts ■500mAoutputcurrentcapability ■±10resistorratiotolerance Applications ■Digitalapp

PDTB123YS

NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ

Features *Built-inbiasresistors *Simplifiescircuitdesign *500mAoutputcurrentcapability *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

PDTB123YS,126

Package：TO-226-3，TO-92-3（TO-226AA）成形引线；包装：剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 描述：TRANS PREBIAS PNP 500MW TO92-3

NXP USA Inc.

PDTB123YT

PNP500mA,50Vresistor-equippedtransistors

Generaldescription 500mAPNPResistor-EquippedTransistors(RET)family. Features ■Built-inbiasresistors ■Reducescomponentcount ■Simplifiescircuitdesign ■Reducespickandplacecosts ■500mAoutputcurrentcapability ■±10resistorratiotolerance Applications ■Digital

PDTB123YT

LowVCEsat(BISS)transistors

PDTB123YT

PNP500mA,50Vresistor-equippedtransistors;R1=2.2k廓,R2=10k廓

Generaldescription 500mAPNPResistor-EquippedTransistors(RET)family. Features ■Built-inbiasresistors ■Reducescomponentcount ■Simplifiescircuitdesign ■Reducespickandplacecosts ■500mAoutputcurrentcapability ■±10resistorratiotolerance Applications ■Digitalapp

PDTB123YT

50V,500mAPNPresistor-equippedtransistor;R1=2.2kΩ,R2=10kΩ

1.Generaldescription PNPResistor-EquippedTransistor(RET)inasmallSOT23(TO-236AB)Surface-MountedDevice (SMD)plasticpackage. NPNcomplement:PDTD123YT 2.Featuresandbenefits •500mAoutputcurrentcapability •Reducespickandplacecosts •Built-inbiasresistors •±10re

PDTB123YT

NPN500mA,50Vresistor-equippedtransistors;R1=2.2kΩ,R2=10kΩ

Features *Built-inbiasresistors *Simplifiescircuitdesign *500mAoutputcurrentcapability *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

PDTB123YT-Q

PNP500mA,50Vresistor-equippedtransistor;R1=2.2kΩ,R2=10kΩ

1.Generaldescription 500mAPNPResistor-EquippedTransistor(RET)inasmallSOT23(TO-236AB)Surface-Mounted Device(SMD)plasticpackage. NPNcomplement:PDTD123YT-Q. 2.Featuresandbenefits •500mAoutputcurrentcapability •Reducespickandplacecosts •Built-inbiasresistors