NPN resistor-equipped transistors; R1 = 2.2 kOHM, R2 = 47 kOHM

DESCRIPTION NPN resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and ampli

文件：92.63 Kbytes 页数：14 Pages

PHI

PHI

PNP resistor-equipped transistors; R1 = 2.2 k廓, R2 = 47 k廓

DESCRIPTION PNP resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplif

文件：181.7 Kbytes 页数：14 Pages

恩XP

丝印：DG；Package：SC-101；PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k

Features and benefits * 100 mA output current capability * Built-in bias resistors * Simplifies circuit design * Reduces component count * Reduces pick and place costs * AEC-Q101 qualified

文件：1.05544 Mbytes 页数：18 Pages

NEXPERIA

安世

丝印：01001001；Package：SOT883B；PNP resistor-equipped transistor; R1 = 2.2 k廓, R2 = 47 k廓

General description PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC123JMB. Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■

文件：842.86 Kbytes 页数：12 Pages

NEXPERIA

安世

PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ

PNP Resistor-Equipped Transistor (RET) family in small Surface-Mounted Device (SMD) plastic packages. • 100 mA output current capability\n• Built-in bias resistors\n• Simplifies circuit design\n• Reduces component count\n• Reduces pick and place costs\n• AEC-Q101 qualified;

Nexperia

安世

PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ

General description\nPNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.\nNPN complement: PDTC123JMB.Features and benefits\n■ 100 mA output current capability\n■ Reduces component count\n■ Built-in bias resistors\n■ Redu

恩XP

PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ

PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC123JMB. • 100 mA output current capability\n• Reduces component count\n• Built-in bias resistors\n• Reduces pick and place costs\n• Simplifies circuit design\n• AEC-Q101 qualified\n• Leadless ultra small SMD plastic package\n• Low package height of 0.37 mm;

Nexperia

安世

Package：SC-101，SOT-883；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 描述：TRANS PREBIAS PNP 50V DFN1006-3

Nexperia USA Inc.

Package：3-XFDFN；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 描述：TRANS PREBIAS PNP 50V DFN1006B-3

Nexperia USA Inc.