NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

FEATURES •Built-in bias resistors •Simplified circuit design •Reduction of component count •Reduced pick and place costs. APPLICATIONS •General purpose switching and amplification •Inverter and interface circuits •Circuit driver.

文件：420.53 Kbytes 页数：15 Pages

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丝印：F7；Package：SC-101；PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

FEATURES •Built-in bias resistors •Simplified circuit design •Reduction of component count •Reduced pick and place costs. APPLICATIONS •General purpose switching and amplification •Inverter and interface circuits •Circuit driver.

文件：421.94 Kbytes 页数：15 Pages

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丝印：F7；Package：SOT883；PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

FEATURES •Built-in bias resistors •Simplified circuit design •Reduction of component count •Reduced pick and place costs. APPLICATIONS •General purpose switching and amplification •Inverter and interface circuits •Circuit driver. DESCRIPTION PNP resistor-equipped transistor (see “Simplif

文件：421.92 Kbytes 页数：15 Pages

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PNP resistor-equipped transistors

DESCRIPTION PNP resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplif

文件：102.48 Kbytes 页数：14 Pages

PHI

PHI

PNP resistor-equipped transistors; R1 = 2.2 k廓, R2 = 2.2 k廓

DESCRIPTION PNP resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplif

文件：189.73 Kbytes 页数：14 Pages

恩XP

丝印：00100010；Package：SOT883B；PNP resistor-equipped transistor; R1 = 2.2 k廓, R2 = 2.2 k廓

General description PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC123EMB. Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■

文件：836.02 Kbytes 页数：13 Pages

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PNP resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm

PNP resistor-equipped transistor (see �Simplified outline, symbol and pinning� for package details). • Built-in bias resistors\n• Simplified circuit design\n• Reduction of component count\n• Reduced pick and place costs.\n• AEC-Q101 qualified;

Nexperia

安世

PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ

PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC123EMB. • 100 mA output current capability\n• Reduces component count\n• Built-in bias resistors\n• Reduces pick and place costs\n• Simplifies circuit design\n• AEC-Q101 qualified\n• Leadless ultra small SMD plastic package\n• Low package height of 0.37 mm;

Nexperia

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Package：SC-101，SOT-883；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 描述：TRANS PREBIAS PNP 50V DFN1006-3

Nexperia USA Inc.

Package：3-XFDFN；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 描述：TRANS PREBIAS PNP 50V DFN1006B-3

Nexperia USA Inc.