丝印：-7C；Package：SOT-323；PNP resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW

PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ DESCRIPTION PNP resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Re

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PHI

PHI

丝印：-7C；Package：SOT-323；PNP resistor-equipped transistors; R1 = 100 k廓, R2 = 100 k廓

DESCRIPTION PNP resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplif

文件：189.96 Kbytes 页数：14 Pages

恩XP

丝印：00100000；Package：SOT883B；PNP resistor-equipped transistor; R1 = 100 k廓, R2 = 100 k廓

文件：960.46 Kbytes 页数：12 Pages

NEXPERIA

安世

丝印：WAB；Package：SOT-23；Low VCEsat (BISS) transistors

文件：948.33 Kbytes 页数：12 Pages

PHI

PHI

丝印：-7C；Package：SOT-323；Low VCEsat (BISS) transistors

文件：948.33 Kbytes 页数：12 Pages

PHI

PHI

PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ

DESCRIPTION\nPNP resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details).FEATURES\n• Built-in bias resistors\n• Simplified circuit design\n• Reduction of component count\n• Reduced pick and place costs.APPLICATIONS\n• General purpose switching and amplificatio • Built-in bias resistors\n• Simplified circuit design\n• Reduction of component count\n• Reduced pick and place costs.;

恩XP

PNP resistor-equipped transistors; R1 = 100 kOhm, R2 = 100 kOhm

PNP resistor-equipped transistor (see �Simplified outline, symbol and pinning� for package details). • Built-in bias resistors\n• Simplified circuit design\n• Reduction of component count\n• Reduced pick and place costs.\n• AEC-Q101 qualified;

Nexperia

安世

PNP resistor-equipped transistor; R1 = 100 kΩ, R2 = 100 kΩ

PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC115EMB. • 20 mA output current capability\n• Reduces component count\n• Built-in bias resistors\n• Reduces pick and place costs\n• Simplifies circuit design\n• AEC-Q101 qualified\n• Leadless ultra small SMD plastic package\n• Low package height of 0.37 mm;

Nexperia

安世

Package：3-XFDFN；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 描述：TRANS PREBIAS PNP 50V DFN1006B-3

Nexperia USA Inc.

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 描述：TRANS PREBIAS PNP 50V TO236AB

Nexperia USA Inc.