Rectifier diodes Schottky barrier

GENERAL DESCRIPTION Dual, common cathode schottky rectifier diodes in a conventional leaded plastic package and a surface mounting plastic package. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR20100CT series is supplied in the SOT78

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PHI

飞利浦

N-channel TrenchMOS standard level FET

General description Standard level N-channel enhancement mode field effect transistor in a plastic package using TrenchMOS™ technology. Features ■ Low thermal resistance ■ SO8 equivalent area footprint ■ Low gate drive current ■ Low on-state resistance. Applications ■ DC-to-DC converters

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PHI

飞利浦

N-channel TrenchMOS standard level FET

1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits H

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NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

Capacitive Sensor

Features ■M30 × 1.5 threaded barrel ■Plastic, PA12‐GF30 ■Fine adjustment via potentiometer ■DC 2-wire, nom. 8.2 VDC ■Output acc. to DIN EN 60947-5-6 (NAMUR) ■Cable connection ■ATEX category II 2 G, Ex Zone 1 ■ATEX category II 1 D, Ex Zone 20 ■SIL 2 (Low Demand Mode) acc. to IEC 61508, PL

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TURCKTurck, Inc.

图尔克德国图尔克集团公司

PRODUCT SPECIFICATION

Cable/Wire stripperss

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JOKARI

ENGINEERS CUTTING TOOLS

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PRESTO