Rectifier diodes schottky barrier

GENERAL DESCRIPTION Dual nickel silicide schottky barrier rectifier diodes in a plastic envelope featuring low forward voltage drop and absence of stored charge. These devices can withstand reverse voltage transients and have guaranteed reverse surge capability. The devices are intended for use i

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PHI

PHI

Rectifier diodes schottky barrier

恩XP

N-channel TrenchMOS ultra low level FET

1.1 General description Ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits

文件：699.28 Kbytes 页数：12 Pages

NEXPERIA

安世

planar inductors

文件：107.81 Kbytes 页数：2 Pages

KOA