N-channel TrenchMOS standard level FET

General description Standard level N-channel enhancement mode field effect transistor in a plastic package using TrenchMOS™ technology. Features ■ Low thermal resistance ■ SO8 equivalent area footprint ■ Low gate drive current ■ Low on-state resistance. Applications ■ DC-to-DC converters

文件：83.13 Kbytes 页数：12 Pages

PHI

飞利浦

N-channel TrenchMOS standard level FET

General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. Features and benefits ■ Higher ope

文件：183.41 Kbytes 页数：12 Pages

恩XP

N-channel TrenchMOS standard level FET

1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits H

文件：682.89 Kbytes 页数：12 Pages

NEXPERIA

安世

PH20100S - N-channel TrenchMOS standard level FET

N-channel TrenchMOS standard level FET - Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. ·Higher operating power due to low thermal resistance\n·Low conduction losses due to low on-state resistance\n·Simple gate drive required due to low gate charge current;

Nexperia

安世

N-channel TrenchMOS standard level FET

恩XP