PBYR6045WT技术资料参数批发供应飞利浦-114ic电子网

首页 >PBYR6045WT>规格书列表

零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
PBYR6045WT	文件：51.17 Kbytes Page：5 Pages	Rectifier diodes Schottky barrier GENERALDESCRIPTION Dual,commoncathodeschottkyrectifierdiodesinaplasticenvelope.Intendedforuseasoutputrectifiersinlowvoltage,highfrequencyswitchedmodepowersupplies. ThePBYR6045WTseriesissuppliedintheconventionalleadedSOT429(TO247)package. FEATURES •Lowforwa	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
6045	文件：40.48 Kbytes Page：1 Pages	SINGLEPOLE,SINGLETHROWCONNECTORIZEDSWITCHES	MICRONETICSMicronetics, Inc. Micronetics, Inc.	MICRONETICS
APT6045AN	文件：309.99 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=14.5A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.45Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
APT6045BN	文件：360.78 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=17A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.45Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
APT6045BN	文件：50.6 Kbytes Page：4 Pages	N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS POWERMOSIV® N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS	ADPOW Advanced Power Technology	ADPOW
APT6045BNR	文件：360.8 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=17A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.45Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
APT6045BVFR	文件：138.46 Kbytes Page：4 Pages	POWERMOSV짰FREDFET	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
APT6045BVFRG	文件：138.46 Kbytes Page：4 Pages	POWERMOSV짰FREDFET	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
APT6045BVR	文件：63.02 Kbytes Page：4 Pages	PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. POWERMOSV® PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •Fast	ADPOW Advanced Power Technology	ADPOW
APT6045BVR	文件：420.09 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
APT6045CVR	文件：61.82 Kbytes Page：4 Pages	PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. POWERMOSV® PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •Fast	ADPOW Advanced Power Technology	ADPOW
APT6045HN	文件：297.53 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=15.5A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.45Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,D	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
APT6045SVFR	文件：138.46 Kbytes Page：4 Pages	POWERMOSV짰FREDFET	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
APT6045SVFRG	文件：138.46 Kbytes Page：4 Pages	POWERMOSV짰FREDFET	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
APT6045SVR	文件：65.76 Kbytes Page：4 Pages	PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. POWERMOSV® PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •Fast	ADPOW Advanced Power Technology	ADPOW
AS6045	文件：146.58 Kbytes Page：2 Pages	SMTO-8CASCADABLEAMPLIFIER	TELEDYNE TELEDYNE	TELEDYNE
ASPI-6045S	文件：2.67269 Mbytes Page：4 Pages	WireWoundMagneticallyShieldedSMDPowerInductor	ABRACONAbracon Corporation 阿布雷肯	ABRACON
C6045A	文件：75.44 Kbytes Page：1 Pages	19SP227/30TCPEPVCComputerCable	GENERALGeneral Electric 通用电气公司美国通用电气公司	GENERAL
CBT-BGA-6045	文件：344.36 Kbytes Page：4 Pages	Automatedprobemanufacturingenableslowcostandshortleadtime	IRONWOODIronwood Electronics. Lronwood电子公司	IRONWOOD
CLF6045NI-D	文件：147.98 Kbytes Page：9 Pages	InductorsforPowerCircuitsWoundFerrite FEATURES Magneticshieldtypewoundinductorforpowercircuits. Itcanbeusedatawidetemperaturerange.–55～+150°C（Includingself-temperaturerise) 1to470μH,wideE-6Serieslineupallowsforvarioususages. APPLICATION Equipmentusedforautomobiles(ECM,airbags,headl	TDKTDK Corporation 东电化（中国）投资有限公司	TDK

12 3 4 5 6 >>>

供应商	型号	品牌	批号	封装	库存	备注	价格
上海金庆电子技术有限公司	PBYR6045WT	PHILIPS	新		434	全新原装货期两周	询价
深圳市百视威讯电子科技有限公司	PBYR6045WT		23+	N/A	46290	正品授权货源可靠	询价
瀚佳科技(深圳)有限公司	PBYR6045WT	PHILIPS	2020+	SOT429(TO247)	16800	绝对原装进口现货,假一赔十,价格优势!?	询价
深圳市科恒伟业电子有限公司	PBYR6045WT	PHILIPS/飞利浦	22+	TO-247	6521	只做原装正品现货!或订货假一赔十!	询价
深圳兆威电子有限公司	PBYR6045WT	PHILIPS/飞利浦	23+	TO-247	90000	只做原厂渠道价格优势可提供技术支持	询价
深圳市振芯物联科技有限公司	PBYR6045WT	PHILIPS	22+	TO-247	28600	只做原装正品现货假一赔十一级代理	询价
深圳市国宇半导体科技有限公司	PBYR6045WT	NXP/恩智浦	23+	TO-247	10000	公司只做原装正品	询价
深圳市威尔健半导体有限公司	PBYR6045WT	PHILIPS/飞利浦	23+	TO-247	50000	全新原装正品现货,支持订货	询价
深圳市安富世纪电子有限公司	PBYR6045WT	PHI	21+	TO-247	50000	全新原装正品现货,支持订货	询价
深圳廊盛科技有限公司	PBYR6045WT	PHILIPS/飞利浦	2022	TO-247	80000	原装现货,OEM渠道,欢迎咨询	询价

更多PBYR6045WT供应商更新时间2024-5-1 16:06:00

相关规格书

相关库存