50 V, 3 A PNP low VCEsat (BISS) transistor

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.\n NPN complement: PBSS4350T. • Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat\n• High collector current capability\n• High collector current gain\n• Improved efficiency due to reduced heat generation.\n• AEC-Q101 qualified;

Nexperia

安世

双极晶体管

BlueRocket

蓝箭电子

50 V, 3 A PNP low VCEsat transistor

PNP low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.\n NPN complement: PBSS4350T-Q • Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat\n• High collector current capability\n• High collector current gain\n• Improved efficiency due to reduced heat generation\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

Nexperia

安世

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 50V 2A TO236AB

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：PBSS5350TH/SOT23/TO-236AB

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：PBSS5350T/SOT23/TO-236AB

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司