丝印：ZD；Package：SOT23；50 V, 3 A PNP low VCEsat transistor

1. General description PNP low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4350T-Q 2. Features and benefits • Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat • High collector current capability

文件：225.03 Kbytes 页数：11 Pages

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安世安世半导体(中国)有限公司

50 V, 3 A PNP low VCEsat transistor

PNP low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.\n NPN complement: PBSS4350T-Q • Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat\n• High collector current capability\n• High collector current gain\n• Improved efficiency due to reduced heat generation\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

Nexperia

安世

50 V, 3 A PNP low VCEsat (BISS) transistor

DESCRIPTION PNP low VCEsat transistor in a SOT89 plastic package. NPN complement: PBSS4350X. FEATURES • SOT89 (SC-62) package • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • Higher efficiency leading to less heat generation • Reduced prin

文件：107.55 Kbytes 页数：11 Pages

PHI

飞利浦

Low VCEsat (BISS) transistors

文件：948.33 Kbytes 页数：12 Pages

PHI

飞利浦