Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：PBSS5350TH/SOT23/TO-236AB

Nexperia USA Inc.

50 V, 3 A PNP low VCEsat transistor

1. General description PNP low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4350T-Q 2. Features and benefits • Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat • High collector current capability

文件：225.03 Kbytes 页数：11 Pages

NEXPERIA

安世

50 V, 3 A PNP low VCEsat (BISS) transistor

DESCRIPTION PNP low VCEsat transistor in a SOT89 plastic package. NPN complement: PBSS4350X. FEATURES • SOT89 (SC-62) package • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • Higher efficiency leading to less heat generation • Reduced prin

文件：107.55 Kbytes 页数：11 Pages

PHI

飞利浦

Low VCEsat (BISS) transistors

文件：948.33 Kbytes 页数：12 Pages

PHI

飞利浦