丝印：3H；Package：DFN2020D-6；60 V, 2 A PNP/PNP low VCEsat (BISS) double transistor

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60 V, 2 A NPN/PNP low VCEsat double transistor

Features and benefits • Very low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain hFE at high IC • Reduced Printed-Circuit Board (PCB) requirements • Exposed heat sink for excellent thermal and electrical conductivity •

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NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

60 V, 2 A PNP/PNP low VCEsat (BISS) double transistor

PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.\n NPN/NPN complement: PBSS4260PANS • Very low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain hFE at high IC\n• Reduced Printed-Circuit Board (PCB) requirements\n• Exposed heat sink for excellent thermal and electrical conductivity\n• High energy efficiency du;

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安世

60 V, 2 A PNP/PNP low VCEsat double transistor

PNP/PNP low VCEsat double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.\n NPN/NPN complement: PBSS4260PANS-Q

Nexperia

安世