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PBSS5260PAPS中文资料60 V, 2 A PNP/PNP low VCEsat (BISS) double transistor数据手册Nexperia规格书
PBSS5260PAPS规格书详情
描述 Description
PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.
NPN/NPN complement: PBSS4260PANS
特性 Features
• Very low collector-emitter saturation voltage VCEsat
• High collector current capability IC and ICM
• High collector current gain hFE at high IC
• Reduced Printed-Circuit Board (PCB) requirements
• Exposed heat sink for excellent thermal and electrical conductivity
• High energy efficiency due to less heat generation
• Suitable for Automatic Optical Inspection (AOI) of solder joints
• AEC-Q101 qualified
应用 Application
• Load switch
• Battery-driven devices
• Power management
• Charging circuits
• LED lighting
• Power switches (e.g. motors, fans)
技术参数
- 制造商编号
：PBSS5260PAPS
- 生产厂家
：Nexperia
- Package name
：DFN2020D-6
- Size (mm)
：2 x 2 x 0.65
- Product status
：Production
- Polarity
：PNP
- Nr of transistors
：2
- VCEO [max] (V)
：-60
- IC [max] (A)
：-2
- VCEsat [max] (PNP) (mV)
：-390
- RCEsat@IC [max]; IC/IB =10 [typ] (mΩ)
：310
- hFE [min]
：170
- fT [typ] (MHz)
：100
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
23+ |
SOT89 |
38 |
正规渠道,只有原装! |
询价 | ||
恩XP |
24+ |
SO-8 |
30000 |
原装正品公司现货,假一赔十! |
询价 | ||
PHI |
23+ |
原厂封装 |
12300 |
询价 | |||
恩XP |
24+ |
SOT-89 |
10200 |
新进库存/原装 |
询价 | ||
恩XP |
21+ |
SO-8 |
8080 |
只做原装,质量保证 |
询价 | ||
恩XP |
23+ |
SO-8 |
8080 |
原装正品，支持实单 |
询价 | ||
Nexperia |
2022+ |
原厂原包装 |
8600 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
Nexperia(安世) |
2447 |
SOT-1118D |
315000 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
NEXPERIA/安世 |
2450+ |
NA |
9850 |
只做原厂原装正品现货或订货假一赔十! |
询价 | ||
恩XP |
22+ |
SO-8 |
12000 |
只有原装,绝对原装,假一罚十 |
询价 |
