60 V, 2 A NPN/PNP low VCEsat double transistor

Features and benefits • Very low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain hFE at high IC • Reduced Printed-Circuit Board (PCB) requirements • Exposed heat sink for excellent thermal and electrical conductivity •

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NEXPERIA

安世

60 V, 2 A PNP/PNP low VCEsat double transistor

PNP/PNP low VCEsat double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.\n NPN/NPN complement: PBSS4260PANS-Q

Nexperia

安世

60 V, 1.7 A PNP low VCEsat (BISS) transistor

1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN complement: PBSS4260QA. 2. Features and benefits • Very low collector-

文件：732.1 Kbytes 页数：17 Pages

NEXPERIA

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Voltage regulator diodes

Low-power voltage regulator diodes in small hermetically sealed glass SOD80C SMD packages. The series consists of 43 types with nominal working voltages from 3.0 to 75 V. FEATURES • Total power dissipation : max. 500 mW • Tolerance series:±5 • Working voltage range : nom. 3.0 to 75 V

文件：37.87 Kbytes 页数：7 Pages

PHI

PHI