30 V, 2 A PNP/PNP low VCEsat double transistor

Features and benefits • Very low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain hFE at high IC • Reduced Printed-Circuit Board (PCB) requirements • High energy efficiency due to less heat generation • Qualified accordi

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NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

30 V, 2 A PNP/PNP low VCEsat double transistor

Nexperia

安世

30 V, 2 A PNP low VCEsat (BISS) transistor

1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN complement: PBSS4230QA. 2. Features and benefits • Very low collector-

文件：727.5 Kbytes 页数：17 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

30 V, 2 A PNP low VCEsat (BISS) transistor

DESCRIPTION PNP BISS transistor in a SOT23 plastic package offering ultra low VCEsat and RCEsat parameters. FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • Higher efficiency leading to less heat generation • Reduced printed-circuit

文件：55.62 Kbytes 页数：7 Pages

PHI

飞利浦