60 V, 3 A NPN low VCEsat transistor

NPN low VCEsat transistor, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and soldarable side pads.\n PNP complement: PBSS5360PAS-Q • Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain (hFE) at high IC\n• High efficiency due to less heat generation\n• High temperature applications up to 175 °C\n• Reduced Printed-Circuit Board (PCB) area requirements\n• E;

Nexperia

安世

丝印：E9；Package：DFN2020D-3；60 V, 3 A NPN low VCEsat transistor

1. General description NPN low VCEsat transistor, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and soldarable side pads. PNP complement: PBSS5360PAS-Q 2. Features and benefits • Low

文件：306.96 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

Package：3-PowerUDFN；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 60V 3A DFN2020D-3

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

60 V, 3 A NPN low VCEsat BISS transistor

文件：254.8 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

60 V, 3 A NPN low VCEsat BISS transistor

文件：254.8 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

60 V, 3 A NPN low VCEsat BISS transistor

文件：254.8 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司