PBSS4360PAS-Q分立半导体产品的晶体管-双极性晶体管（BJT）-单个规格书PDF中文资料

1. General description

NPN low VCEsat transistor, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small

Surface-Mounted Device (SMD) plastic package with medium power capability and visible and

soldarable side pads.

PNP complement: PBSS5360PAS-Q

2. Features and benefits

• Low collector-emitter saturation voltage VCEsat

• High collector current capability IC and ICM

• High collector current gain (hFE) at high IC

• High efficiency due to less heat generation

• High temperature applications up to 175 °C

• Reduced Printed-Circuit Board (PCB) area requirements

• Exposed heat sink for excellent thermal and electrical conductivity

• Leadless small SMD plastic package with soldarable side pads

• Suitable for Automatic Optical Inspection (AOI) of solder joint

• Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

• Loadswitch

• Battery-driven devices

• Power management

• Charging circuits

• Power switches (e.g. motors, fans)