30 V, 1 A NPN low VCEsat (BISS) transistor

DESCRIPTION NPN BISS transistor in a SOT23 plastic package providing ultra low VCEsat and RCEsat parameters. PNP complement: PBSS5130T. FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency leading to less heat generation

文件：49.62 Kbytes 页数：7 Pages

PHI

飞利浦

丝印：3C；Package：SOT23；30 V, 1 A NPN low VCEsat (BISS) transistor

FEATURES · Low collector-emitter saturation voltage VCEsat · High collector current capability IC and ICM · High efficiency leading to less heat generation · Reduced printed-circuit board requirements · Cost effective alternative to MOSFETs in specific applications. APPLICATIONS · Power

文件：169.83 Kbytes 页数：8 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

Low VCEsat (BISS) transistors

文件：948.33 Kbytes 页数：12 Pages

PHI

飞利浦

NPN low VCEsat (BISS) transistor

文件：55.29 Kbytes 页数：7 Pages

PHI

飞利浦

30 V; 1 A NPN low VCEsat (BISS) transistor

NPN BISS transistor in a SOT23 plastic package providing ultra low VCEsat and RCEsat parameters. PNP complement: PBSS5130T. • Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High efficiency leading to less heat generation\n• Reduced printed-circuit board requirements\n• Cost effective alternative to MOSFETs in specific applications.\n• AEC-Q101 qualified;

Nexperia

安世

小信号三极管

YJ

益嘉源

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 30V 1A TO236AB

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司