60 V, 3.8 A NPN low VCEsat (BISS) transistor

General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4041PT. Features ■ Very low collector-emitter saturation voltage VCEsat ■ High collector current capability IC and IC

文件：189.5 Kbytes 页数：14 Pages

恩XP

丝印：BK；Package：SOT23；60 V, 3.8 A NPN low VCEsat (BISS) transistor

Features * Very low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High energy efficiency due to less heat generation * AEC-Q101 qualified * Smaller required Printed-Circuit Board (PCB) area than for

文件：302.84 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：BK；Package：SOT23；60 V, 3.8 A NPN low VCEsat transistor

1. General description NPN low VCEsat transistor in a SOT23 small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4041PT-Q 2. Features and benefits • Very low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector curre

文件：346.02 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

60 V, 3.8 A NPN low VCEsat (BISS) transistor

文件：189.5 Kbytes 页数：14 Pages

PHI

飞利浦

60 V, 3.8 A NPN low VCEsat (BISS) transistor

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.\n PNP complement: PBSS4041PT. • Very low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain (hFE) at high IC\n• High energy efficiency due to less heat generation\n• AEC-Q101 qualified\n• Smaller required Printed-Circuit Board (PCB) area than for conventiona;

Nexperia

安世

60 V, 3.8 A NPN low VCEsat transistor

NPN low VCEsat transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.\n PNP complement: PBSS4041PT • Very low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain (hFE) at high IC\n• High energy efficiency due to less heat generation\n• Smaller required Printed-Circuit Board (PCB) area than for conventional transistors\n• Quali;

Nexperia

安世

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 60V 3.8A TO236AB

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司