4.0SMF14A

Marking：BK；Package：SOD-123；3.3 To 48V 400W Surface Mount Transient Voltage Suppressors (TVS)

Features Glasspassivatedchip 400Wpeakpulsepowercapabilitywitha10/1000uswaveform Repetitiverate(dutycycle):0.01 TypicalIRlessthan1μAabove10V Excellentclampingcapability Veryfastresponsetime Hightemperaturesoldering:260℃/10satterminals. MeetAEC-Q101requirement

6.0SMAJ14CA

Marking：BK；Package：DO-214AC；5.0 To 200V 600W Surface Mount Transient Voltage Suppressors (TVS)

Glasspassivatedchip 600Wpeakpulsepowercapabilitywitha10/1000uswaveform Repetitiverate(dutycycle):0.01 TypicalIRlessthan1μAabove10V Excellentclampingcapability Veryfastresponsetime Hightemperaturesoldering:260°C/10satterminals. RoHScompliant Features

ACDBUC0340-HF

Marking：BK；Package：SOD-523F；SMD Schottky Barrier Diode

Features -Lowforwardvoltage. -Designedformountingonsmallsurface. -Extremelythinpackage. -Majoritycarrierconduction. -AEC-Q101Qualified&PPAP.

BC56-10PA

Marking：BK；Package：HUSON3；80 V, 1 A NPN medium power transistors

Featuresandbenefits Highcurrent Threecurrentgainselections Highpowerdissipationcapability Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) AEC-Q101qualified

BC56-10PA

Marking：BK；Package：SOT1061；80 V, 1 A NPN medium power transistors

Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •Exposedheatsinkforexcellentthermalandelectricalconductivity •LeadlessverysmallSMDplasticpackagewithmediumpowercapability •AEC-Q101qual

BC56-10PA-Q

Marking：BK；Package：SOT1061；80 V, 1 A NPN medium power transistors

Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •Exposedheatsinkforexcellentthermalandelectricalconductivity •LeadlessverysmallSMDplasticpackagewithmediumpowercapability •Qualifiedacc

BCX56-10

Marking：BK；Package：SOT89；80 V, 1 A NPN medium power transistors

1.Generaldescription NPNmediumpowertransistorsinaSOT89(SC-62)flatleadSurface-MountedDevice(SMD) plasticpackage 2.Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability 3.Applications •Li

BCX56-10

Marking：BK；Package：SC-62；80 V, 1 A NPN medium power transistors

Featuresandbenefits Highcurrent Threecurrentgainselections Highpowerdissipationcapability Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) AEC-Q101qualified

BCX56-10

Marking：BK；Package：SOT-89-3L；SOT-89-3L Plastic-Encapsulate Transistors

FEATURES ®PNPComplementstoBCX51,BCX52,BCX53 ®LowVoltage ®HighCurrent APPLICATIONS ®DriverStagesofAudioAmplifiers

BCX56-10

Marking：BK；Package：SOT-89；Plastic-Encapsulate Transistors

FEATURES PNPComplementstoBCX51,BCX52,BCX53 LowVoltage HighCurrent APPLICATIONS DriverStagesofAudioAmplifiers