丝印：BK；Package：SOT23；60 V, 3.8 A NPN low VCEsat transistor

1. General description NPN low VCEsat transistor in a SOT23 small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4041PT-Q 2. Features and benefits • Very low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector curre

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60 V, 3.8 A NPN low VCEsat transistor

NPN low VCEsat transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.\n PNP complement: PBSS4041PT • Very low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain (hFE) at high IC\n• High energy efficiency due to less heat generation\n• Smaller required Printed-Circuit Board (PCB) area than for conventional transistors\n• Quali;

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60 V, 6.2 A NPN low VCEsat (BISS) transistor

Technical summary NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4041PX. Features and benefits • Very low collector-emitter saturation voltage VCEsat • High collector

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60 V, 7 A NPN low VCEsat (BISS) transistor

General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4041PZ. Features and benefits ■ Very low collector-emitter saturation voltage VCEsat ■ High collector curren

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60 V, 7 A NPN low VCEsat transistor

1. General description NPN low VCEsat transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4041PZ-Q 2. Features and benefits • Very low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • Hig

文件：289.24 Kbytes 页数：14 Pages

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