丝印：4032SP；Package：SO8；30 V, 4.8 A PNP/PNP low VCEsat (BISS) transistor

General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package. Features and benefits ■ Low collector-emitter saturation voltage VCEsat ■ Optimized switching time ■ High collector current capab

文件：837.72 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：4032SPN；Package：SO8；30 V NPN/PNP low VCEsat (BISS) transistor

Features and benefits * Low collector-emitter saturation voltage VCEsat * Optimized switching time * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area t

文件：1.17075 Mbytes 页数：20 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

30 V NPN/PNP low VCEsat (BISS) transistor

General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package. Features and benefits ■ Low collector-emitter saturation voltage VCEsat ■ Optimized switching time ■ High collector current capab

文件：220.41 Kbytes 页数：20 Pages

恩XP

30 V, 4.8 A PNP/PNP low VCEsat (BISS) transistor

文件：173.31 Kbytes 页数：15 Pages

PHI

飞利浦

30 V NPN/PNP low VCEsat (BISS) transistor

文件：533.49 Kbytes 页数：20 Pages

PHI

飞利浦

PBSS4032SP - 30 V, 4.8 A PNP/PNP low VCEsat (BISS) transistor

30 V, 4.8 A PNP/PNP low VCEsat (BISS) transistor - PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package. ·Low collector-emitter saturation voltage VCEsat\n·Optimized switching time\n·High collector current capability IC and ICM\n·High collector current gain (hFE) at high IC\n·High efficiency due to less heat generation\n·Smaller required Printed-Circuit Board (PCB) area than for conventional transistor;

Nexperia

安世

PBSS4032SPN - 30 V, 5.7 A NPN/PNP low VCEsat (BISS) transistor

30 V, 5.7 A NPN/PNP low VCEsat (BISS) transistor - NPN /PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) Surface-Mounted Device (SMD) plastic package. ·High collector current capability IC and ICM\n·High collector current gain (hFE) at high IC\n·High energy efficiency due to less heat generation\n·Low collector-emitter saturation voltage VCEsat\n·Optimized switching time\n·Smaller required PCB area than for conventional transistors;

Nexperia

安世