丝印：6H；Package：SC-62；30 V, 4.7 A NPN low VCEsat (BISS) transistor

General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4032PX. Features and benefits ■ Very low collector-emitter saturation voltage VCEsat ■ Optimized sw

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30 V, 4.7 A NPN low VCEsat (BISS) transistor

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.\n PNP complement: PBSS4032PX. • Very low collector-emitter saturation voltage VCEsat\n• Optimized switching time\n• High collector current capability IC and ICM\n• High collector current gain (hFE) at high IC\n• High energy efficiency due to less heat generation\n• AEC-Q101 qualified\n• Smaller required Printed-Circuit Board (PC;

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30 V, 4.7 A NPN low VCEsat transistor

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Package：TO-243AA；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 30V 4.7A SOT89

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司