30 V, 4.7 A NPN low VCEsat transistor

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安世

30 V, 4.9 A NPN low VCEsat (BISS) transistor

Features and benefits * Low collector-emitter saturation voltage VCEsat * Optimized switching time * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High energy efficiency due to less heat generation * AEC-Q101 qualified * Smaller required Print

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NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

30 V, 4.9 A NPN low VCEsat transistor

1. General description NPN low VCEsattransistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4032PZ-Q 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • Optimized switching time • High collector current capabi

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NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

CONNECTORIZED PHASE SHIFTERS

DESCRIPTION Digital phase shifters optimized for low loss and/or high power. Each one features a unique capability which allows it to be used in either the transmit or receive path. Hermetic, military/industrial design. ADDITIONAL FEATURES (#4031) ■ Low loss: 1.7 dB ■ RF power: 50 dBm CONNECT

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MICRONETICS

微盟电子

Double Coated Urethane Foam Tapes

文件：109 Kbytes 页数：5 Pages

3M

Heyco-Flex™ VI Liquid Tight Conduit Fittings

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Heyco