丝印：BM；Package：SOT23；30 V, 2.6 A NPN low VCEsat transistor

1. General description NPN low VCEsat transistor in a SOT23 small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4032PT-Q 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • Optimized switching time • High collector current capability IC and ICM

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安世安世半导体(中国)有限公司

30 V, 2.6 A NPN low VCEsat transistor

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安世

30 V, 4.7 A NPN low VCEsat (BISS) transistor

General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4032PX. Features and benefits ■ Very low collector-emitter saturation voltage VCEsat ■ Optimized sw

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NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

30 V, 4.9 A NPN low VCEsat (BISS) transistor

Features and benefits * Low collector-emitter saturation voltage VCEsat * Optimized switching time * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High energy efficiency due to less heat generation * AEC-Q101 qualified * Smaller required Print

文件：737.96 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司