4.0SMF15A

Marking：BM；Package：SOD-123；3.3 To 48V 400W Surface Mount Transient Voltage Suppressors (TVS)

Features Glasspassivatedchip 400Wpeakpulsepowercapabilitywitha10/1000uswaveform Repetitiverate(dutycycle):0.01 TypicalIRlessthan1μAabove10V Excellentclampingcapability Veryfastresponsetime Hightemperaturesoldering:260℃/10satterminals. MeetAEC-Q101requirement

6.0SMAJ15CA

Marking：BM；Package：DO-214AC；5.0 To 200V 600W Surface Mount Transient Voltage Suppressors (TVS)

Glasspassivatedchip 600Wpeakpulsepowercapabilitywitha10/1000uswaveform Repetitiverate(dutycycle):0.01 TypicalIRlessthan1μAabove10V Excellentclampingcapability Veryfastresponsetime Hightemperaturesoldering:260°C/10satterminals. RoHScompliant Features

824500151

Marking：BM；WE-TVSP Power TVS Diode

GeneralInformation: Itisrecommendedthatthetemperatureofthecomponentdoesnotexceed+150°Cunderworst caseconditions OperatingTemperature-65upto+150°C StorageConditions(inoriginal packaging)

824521151

Marking：BM；WE-TVSP Power TVS Diode

GeneralInformation: Itisrecommendedthatthetemperatureofthecomponentdoesnotexceed+150°Cunderworst caseconditions OperatingTemperature-65upto+150°C StorageConditions(inoriginal packaging)

AL17051V5W5-7

Marking：BM；Package：SOT25；ULTRA-LOW STANDBY POWER HV BUCK CONVERTER

Features -IntegratedMOSFETupto700V -FixedOptionforOutput3.3Vand5V -NoLoadOperationPowerLessthan10mW -HighEfficiency60at50mAOutput -HighLight-LoadEfficiency50at10mAOutput -Universal85to300VACInputRange -SupportsLowComponent-CountBuckTopologies -Au

BC69-16PA

Marking：BM；Package：HUSON3；20 V, 2 A PNP medium power transistors

Featuresandbenefits Highcurrent Threecurrentgainselections Highpowerdissipationcapability Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) AEC-Q101qualified

BCX55-16

Marking：BM；NPN TRANSISTOR

VOLTAGE45~80.0VoltsCURRENT1.0Ampers FEATURES ●Highcurrent(max.1A). ●Lowvoltage(max.80V).

BCX55-16

Marking：BM；Package：SC-62；60 V, 1 A NPN medium power transistors

1.Generaldescription NPNmediumpowertransistorsinaSOT89(SC-62)flatleadSurface-MountedDevice(SMD) plasticpackage. Table1.Productoverview TypenumberPackage NexperiaJEITA NPNcomplement BCX55BCX52 BCX55-10BCX52-10 BCX55-16 SOT89SC-62 BCX52-16 2.Featuresandbenef

BCX55-16

Marking：BM；Package：SC-62；60 V, 1 A NPN medium power transistors

Featuresandbenefits Highcurrent Threecurrentgainselections Highpowerdissipationcapability Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) AEC-Q101qualified

BCX55-16

Marking：BM；Package：SOT-89；NPN Silicon AF Transistors

FEATURES ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BCX51…BCX53(PNP)