丝印：BM3；Package：SMA；600 W Transient Voltage Suppressor

1. General description 600 W uni- and bi-directional Transient Voltage Suppressor (TVS) in a SMA Surface-Mounted Device (SMD) plastic package, designed for transient voltage protection. 2. Features and benefits • Rated peak pulse power at 10/1000 μs waveform: PPPM = 600 W • Reverse standoff

文件：210.65 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：BM3；Package：SC70；Single Bus Buffer Gate With 3-State Output

文件：1.39497 Mbytes 页数：28 Pages

TI

德州仪器

丝印：BM3；Package：SC70；Single Bus Buffer Gate With 3-State Output

文件：1.39497 Mbytes 页数：28 Pages

TI

德州仪器

丝印：BM3；Package：SC70；Single Bus Buffer Gate With 3-State Output

文件：1.39497 Mbytes 页数：28 Pages

TI

德州仪器

丝印：BM3；Package：SC70；Single Bus Buffer Gate With 3-State Output

文件：1.39497 Mbytes 页数：28 Pages

TI

德州仪器

丝印：BM3；Package：SC70；Single Bus Buffer Gate With 3-State Output

文件：1.39497 Mbytes 页数：28 Pages

TI

德州仪器

丝印：M3G005MUV；Package：VQFN046V8080；650 V GaN HEMT Power Stage

Features ◼ Nano CapTM Integrated 5 V LDO ◼ Wide Operating Range for VDD Pin Voltage ◼ Wide Operating Range for IN Pin Voltage ◼ Low VDD Quiescent and Operating Current ◼ Low Propagation Delay ◼ High dv/dt Immunity ◼ Adjustable Gate Drive Strength ◼ Power Good Signal Output ◼ VDD UVLO Prot

文件：1.02954 Mbytes 页数：29 Pages

ROHM

罗姆

丝印：M3G007MUV；Package：VQFN046V8080；650 V GaN HEMT Power Stage

Features ◼ Nano CapTM Integrated Output Selectable 5 V LDO ◼ Long Time Support Product for Industrial Applications ◼ Wide Operating Range for VDD Pin Voltage ◼ Wide Operating Range for IN Pin Voltage ◼ Low VDD Quiescent and Operating Current ◼ Low Propagation Delay ◼ High dv/dt Immunity ◼

文件：1.44813 Mbytes 页数：29 Pages

ROHM

罗姆

丝印：M3G015MUV；Package：VQFN046V8080；650 V GaN HEMT Power Stage

Features ◼ Nano CapTM Integrated Output Selectable 5 V LDO ◼ Long Time Support Product for Industrial Applications ◼ Wide Operating Range for VDD Pin Voltage ◼ Wide Operating Range for IN Pin Voltage ◼ Low VDD Quiescent and Operating Current ◼ Low Propagation Delay ◼ High dv/dt Immunity ◼

文件：1.45503 Mbytes 页数：29 Pages

ROHM

罗姆

丝印：M3G107MUV；Package：VQFN046V8080；650 V GaN HEMT Power Stage

Features ◼ Nano CapTM Integrated 5 V LDO ◼ Wide Operating Range for VDD Pin Voltage ◼ Wide Operating Range for IN Pin Voltage ◼ Low VDD Quiescent and Operating Current ◼ Low Propagation Delay ◼ High dv/dt Immunity ◼ Adjustable Gate Drive Strength ◼ Power Good Signal Output ◼ VDD UVLO Prot

文件：1.15736 Mbytes 页数：29 Pages

ROHM

罗姆