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BM3G007MUV-LBE2

Marking:M3G007MUV;Package:VQFN046V8080;650 V GaN HEMT Power Stage

Features ◼NanoCapTMIntegratedOutputSelectable5VLDO ◼LongTimeSupportProductforIndustrialApplications ◼WideOperatingRangeforVDDPinVoltage ◼WideOperatingRangeforINPinVoltage ◼LowVDDQuiescentandOperatingCurrent ◼LowPropagationDelay ◼Highdv/dtImmunity ◼

ROHMRohm

罗姆罗姆半导体集团

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