丝印：M3G107MUV；Package：VQFN046V8080；650 V GaN HEMT Power Stage

Features ◼ Nano CapTM Integrated 5 V LDO ◼ Wide Operating Range for VDD Pin Voltage ◼ Wide Operating Range for IN Pin Voltage ◼ Low VDD Quiescent and Operating Current ◼ Low Propagation Delay ◼ High dv/dt Immunity ◼ Adjustable Gate Drive Strength ◼ Power Good Signal Output ◼ VDD UVLO Prot

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