PBSS2515VS数据手册Nexperia中文资料规格书

描述 Description

NPN low VCEsat double transistor in a SOT666 plastic package.
PNP complement: PBSS3515VS.

特性 Features

• 300 mW total power dissipation
• Very small 1.6 x 1.2 mm ultra thin package
• Excellent coplanarity due to straight leads
• Low collector-emitter saturation voltage
• High current capability
• Improved thermal behaviour due to flat lead
• Replaces two SC-75/SC-89 packaged low VCEsat transistors on same PCB area
• Reduces required PCB area
• Reduced pick and place costs.
• AEC-Q101 qualified

应用 Application

• General purpose switching and muting
• Low frequency driver circuits
• LCD backlighting
• Audio frequency general purpose amplifier applications
• Battery driven equipment (mobile phones, video cameras and hand-held devices).