500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor

General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. Features ■ High voltage ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability IC and ICM ■

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恩XP

丝印：W4；Package：SOT23；500 V, 0.5 A NPN high-voltage low VCEsat transistor

1. General description NPN high-voltage low VCEsat transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9040T 2. Features and benefits • High voltage • Low collector-emitter saturation voltage VCEsat • High collector current capability I

文件：277.87 Kbytes 页数：12 Pages

NEXPERIA

安世

500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor

文件：115.68 Kbytes 页数：12 Pages

恩XP

丝印：W4；Package：SOT23；500 V, 0.5 A NPN high-voltage low VCEsat transistor

1. General description NPN high-voltage low VCEsat transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9040T-Q. 2. Features and benefits • High voltage • Low collector-emitter saturation voltage VCEsat • High collector current capability

文件：259.44 Kbytes 页数：12 Pages

NEXPERIA

安世

500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor

文件：115.68 Kbytes 页数：12 Pages

恩XP

500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor

NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9040T. • High voltage\n• Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain (hFE) at high collector current\n• AEC-Q101 qualified\n• Small SMD plastic package;

Nexperia

安世

500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor

恩XP

500 V, 0.5 A NPN high-voltage low VCEsat transistor

NPN high-voltage low VCEsat transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9040T-Q. • High voltage\n• Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain (hFE) at high collector current\n• Small SMD plastic package\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

Nexperia

安世

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 400V 0.5A TO236AB

Nexperia USA Inc.