丝印：W4；Package：SOT23；500 V, 0.5 A NPN high-voltage low VCEsat transistor

1. General description NPN high-voltage low VCEsat transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9040T-Q. 2. Features and benefits • High voltage • Low collector-emitter saturation voltage VCEsat • High collector current capability

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500 V, 0.5 A NPN high-voltage low VCEsat transistor

NPN high-voltage low VCEsat transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9040T-Q. • High voltage\n• Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain (hFE) at high collector current\n• Small SMD plastic package\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

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500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor

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500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor

Features * High voltage * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * AEC-Q101 qualified

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