PBHV8540X

500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor; • High voltage\n• Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain hFE at high IC\n• AEC-Q101 qualified\n;

NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package.\n PNP complement: PBHV9040X.\n

PBHV8540X

丝印：4D；Package：SOT89；500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor

PBHV8540X-Q

500 V, 0.5 A NPN high-voltage low VCEsat transistor; • High voltage\n• Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain hFE at high IC\n• Qualified according to AEC-Q101 and recommended for use in automotive applications\n;

NPN high-voltage low VCEsat transistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package.\n PNP complement: PBHV9040X\n

PBHV8540X,115

Package：TO-243AA；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 400V 0.5A SOT89

ETC

PBJ322513T-600Y-N

CHILISIN/奇力新
EIA1210

CHILISIN/奇力新