500 V, 0.5 A NPN high-voltage low VCEsat transistor

NPN high-voltage low VCEsat transistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package.\n PNP complement: PBHV9040X • High voltage\n• Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain hFE at high IC\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

Nexperia

安世

500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor

Features * High voltage * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * AEC-Q101 qualified

文件：243.13 Kbytes 页数：13 Pages

NEXPERIA

安世

10/100 Base-TX ISOLATION TRANSFORMERS WITH FILTERS

文件：292.81 Kbytes 页数：12 Pages

PMI

INDUCTORS Inductors Designed for Nationals 150 KHz SIMPLE SWITCHERTM

文件：100.28 Kbytes 页数：1 Pages

FILTRAN

费尔兰特

AXL E EC DI8 DO8 M12 6P

文件：338.36 Kbytes 页数：25 Pages

PhoenixPHOENIX CONTACT

菲尼克斯德国菲尼克斯电气集团

Operates between 0-60 VDC, 1 mA-30 A (150 W maximum)

[EXCELIX] Numeric Displays Alphanumeric Displays Bar Graph Displays

文件：686.11 Kbytes 页数：1 Pages

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