500 V, 0.5 A NPN high-voltage low VCEsat(BISS) transistor

General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. Features ■ High voltage ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability IC and IC

文件：126.18 Kbytes 页数：12 Pages

恩XP

丝印：V8540Z；Package：SC-73；500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor

Features * High voltage * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * AEC-Q101 qualified

文件：243.13 Kbytes 页数：13 Pages

NEXPERIA

安世

500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor

NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9040Z. • High voltage\n• Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain (hFE) at high IC\n• AEC-Q101 qualified;

Nexperia

安世

500 V, 0.5 A NPN high-voltage low VCEsat(BISS) transistor

恩XP

500 V, 0.5 A NPN high-voltage low VCEsat transistor

NPN high-voltage low VCEsat transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.\n PNP complement: PBHV9040Z-Q • High voltage\n• Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain (hFE) at high IC\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

Nexperia

安世

Package：TO-261-4，TO-261AA；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 400V 0.5A SOT223

Nexperia USA Inc.