PBHV8540T-Q中文资料安世数据手册PDF规格书

厂商型号	PBHV8540T-Q
功能描述	500 V, 0.5 A NPN high-voltage low VCEsat transistor
丝印标识	W4
封装外壳	SOT23
文件大小	259.44 Kbytes
页面数量	12 页
生产厂商	Nexperia B.V. All rights reserved
企业简称	NEXPERIA【安世】
中文名称	安世半导体(中国)有限公司官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-6-28 23:00:00
人工找货	PBHV8540T-Q价格和库存，欢迎联系客服免费人工找货

1. General description

NPN high-voltage low VCEsat transistor in a SOT23 (TO-236AB) small Surface-Mounted Device

(SMD) plastic package. PNP complement: PBHV9040T-Q.

2. Features and benefits

• High voltage

• Low collector-emitter saturation voltage VCEsat

• High collector current capability IC and ICM

• High collector current gain (hFE) at high collector current

• Small SMD plastic package

• Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

• Electronic ballast for fluorescent lighting

• LED driver for LED chain module

• LCD backlighting

• High Intensity Discharge (HID) front lighting

• Automotive motor management

• Hook switch for wired telecom

• Switch Mode Power Supply (SMPS)