50 V low VCEsat PNP transistor

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PHI

PHI

50 V low VCEsat PNP transistor

DESCRIPTION\nPNP low VCEsat transistor in a SOT223 plastic package.\nNPN complement: PBSS4350Z.FEATURES\n• Low collector-emitter saturation voltage\n• High collector current capability: IC and ICM\n• High collector current gain (hFE) at high IC\n• Higher efficiency leading to less heat generation\n• • Low collector-emitter saturation voltage\n• High collector current capability: IC and ICM\n• High collector current gain (hFE) at high IC\n• Higher efficiency leading to less heat generation\n• Reduced PCB area requirements compared to DPAK.;

恩XP

丝印：PB5350；Package：SC-73；50 V, 3 A PNP low VCEsat (BISS) transistor

1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4350Z 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current

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NEXPERIA

安世

PNP transistor

DESCRIPTION PNP low VCEsat transistor in a SC-74 plastic package. NPN complement: PBSS4350D. FEATURES • High current capabilities • Low VCEsat. APPLICATIONS • Heavy duty battery powered equipment (Automotive, Telecom and Audio/Video) such as motor and lamp drivers • VCEsat critical applica

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PHI

PHI

Low VCEsat (BISS) transistors

文件：948.33 Kbytes 页数：12 Pages

PHI

PHI