PB5350中文资料50 V low VCEsat PNP transistor数据手册恩XP规格书

描述 Description

DESCRIPTION
PNP low VCEsat transistor in a SOT223 plastic package.
NPN complement: PBSS4350Z.FEATURES
• Low collector-emitter saturation voltage
• High collector current capability: IC and ICM
• High collector current gain (hFE) at high IC
• Higher efficiency leading to less heat generation
• Reduced PCB area requirements compared to DPAK.APPLICATIONS
• Power management
   – DC/DC converters
   – Supply line switching
   – Battery charger
   – Linear voltage regulation (LDO).
• Peripheral drivers
   – Driver in low supply voltage applications, e.g. lamps,
      LEDs
   – Inductive load driver, e.g. relays, buzzers, motors.

特性 Features

• Low collector-emitter saturation voltage
• High collector current capability: IC and ICM
• High collector current gain (hFE) at high IC
• Higher efficiency leading to less heat generation
• Reduced PCB area requirements compared to DPAK.

应用 Application

• Power management
   – DC/DC converters
   – Supply line switching
   – Battery charger
   – Linear voltage regulation (LDO).
• Peripheral drivers
   – Driver in low supply voltage applications, e.g. lamps,
      LEDs
   – Inductive load driver, e.g. relays, buzzers, motors.