丝印：P5610T；Package：SOT223；80 V, 1 A NPN medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability

文件：287.1 Kbytes 页数：15 Pages

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丝印：P5610T；Package：SOT223；80 V, 1 A NPN medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • Qualified according to AEC-Q101 and recommended for use in automotive applications

文件：287.63 Kbytes 页数：15 Pages

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丝印：P5616H；Package：SC-73；80 V, 1 A NPN medium power transistors

Features and benefits  High collector current capability IC and ICM  Three current gain selections  High power dissipation capability  High-temperature applications up to 175 C  AEC-Q101 qualified

文件：1.25919 Mbytes 页数：16 Pages

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丝印：P5616T；Package：SC-73；80 V, 1 A NPN medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability

文件：287.1 Kbytes 页数：15 Pages

NEXPERIA

安世

丝印：P5616T；Package：SC-73；80 V, 1 A NPN medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • Qualified according to AEC-Q101 and recommended for use in automotive applications

文件：287.63 Kbytes 页数：15 Pages

NEXPERIA

安世

丝印：P5610H；Package：SC-73；80 V, 1 A NPN medium power transistors

文件：1.25985 Mbytes 页数：16 Pages

NEXPERIA

安世

丝印：P5610T；Package：SOT223；80 V, 1 A NPN medium power transistors

文件：275.24 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：P5616H；Package：SC-73；80 V, 1 A NPN medium power transistors

文件：1.25985 Mbytes 页数：16 Pages

NEXPERIA

安世

丝印：P5616T；Package：SOT223；80 V, 1 A NPN medium power transistors

文件：275.24 Kbytes 页数：14 Pages

NEXPERIA

安世

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