Fully Sealed Container Cermet Potentiometers Military and Professional Grade

FEATURES • High power rating 1.5 Watt at 70 °C • CECC 41 301-001 (A, B, C) • GAM T1 • Fully sealed case • Tight temperature coefficient (± 75 ppm/°C typical) • Mechanical strength    

文件：117.43 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

Fully Sealed Container Cermet Potentiometer Professional Grade

FEATURES • High power rating 1.5 W at 70 °C • Product qualification: According to CECC 41 301-001 (A, B, C) • Test according to CECC 41000 or IEC 60393-1 • GAM T1 • Cermet element • Fully sealed case • Tight temperature coefficient (± 75 ppm/°C typical) • Mechanical strength • Material c

文件：121.23 Kbytes 页数：7 Pages

VishayVishay Siliconix

威世科技

Fully Sealed Container Cermet Potentiometer

文件：137.02 Kbytes 页数：7 Pages

VishayVishay Siliconix

威世科技

丝印：P13；Package：SOT563；PNP PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR

Features - Epitaxial Planar Die Construction - Complementary NPN Types Available (DDC) - Built-In Biasing Resistors - Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) - Halogen and Antimony Free. “Green” Device (Note 3) - Qualified to AEC-Q101 Standards for High Reliability

文件：282.89 Kbytes 页数：6 Pages

DIODES

美台半导体

丝印：P13；Package：SOT523；PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features - Epitaxial Planar Die Construction - Complementary NPN Types Available (DDTC) - Built-In Biasing Resistors, R1 R2 - Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) - Halogen and Antimony Free. “Green” Device (Note 3) - Qualified to AEC-Q101 Standards for High Reliability

文件：457.15 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：P13；Package：SOT-523；-200mA / -30V Low VCE (sat) Digital transistors (with built-in resistors)

Feature 1) VCE(sat) is lower than conventional products. 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 3) The bias resistors consist of thin-film resistors with complete isolation to allow p

文件：63.94 Kbytes 页数：2 Pages

ROHM

罗姆

丝印：P13；Package：VMT3；-200mA / -30V Low VCE (sat) Digital transistors (with built-in resistors)

Feature 1) VCE(sat) is lower than conventional products. 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 3) The bias resistors consist of thin-film resistors with complete isolation to allow p

文件：63.94 Kbytes 页数：2 Pages

ROHM

罗姆

丝印：P13；Package：VMT3；200mA / ??0V Low VCE (sat) Digital transistors

文件：968.44 Kbytes 页数：3 Pages

ROHM

罗姆

丝印：P1300EA；Package：TO-92；Thyristor Surge Suppressors (TSS)

Features and Benefits Low voltage overshoot Low on-state voltage Does not degrade surge capability after multiple surge events within limit Fails short circuit when surged in excess of ratings Low Capacitance

文件：2.82579 Mbytes 页数：6 Pages

UNSEMI

优恩半导体

丝印：P1300EB；Package：TO-92；Thyristor Surge Suppressors (TSS)

Features and Benefits Low voltage overshoot Low on-state voltage Does not degrade surge capability after multiple surge events within limit Fails short circuit when surged in excess of ratings Low Capacitance

文件：2.82166 Mbytes 页数：6 Pages

UNSEMI

优恩半导体