丝印：P10V60；Package：TO-277；10A 60V MOS Schottky Rectifier

文件：722.92 Kbytes 页数：5 Pages

PFC

节能元件

丝印：P1012US；Package：SO-8；12V P-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3) Description and Applications This MOSFET is designed to minimize the on-state resistance

文件：375.4 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：P100P03；Package：TO-220AB；30V P-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@-10V,ID@-20A

文件：364.36 Kbytes 页数：8 Pages

PANJIT

強茂

丝印：P10NK80Z；Package：TO-220；N-CHANNEL 800V - 0.78ohm - 9A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESH?줡ower MOSFET

Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

文件：458.81 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

丝印：P10NK80Z；Package：TO-220；N-channel 800 V, 0.78 Ω, 9 A Zener-protected SuperMESH™ Power MOSFETs in TO-220, TO-220FP and TO-247 packages

Description These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is design

文件：444.1 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

丝印：P10NK80ZFP；Package：TO-220FP；N-channel 800 V, 0.78 Ω, 9 A Zener-protected SuperMESH™ Power MOSFETs in TO-220, TO-220FP and TO-247 packages

Description These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is design

文件：444.1 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

丝印：P10NK80ZFP；Package：TO-220FP；N-CHANNEL 800V - 0.78ohm - 9A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESH?줡ower MOSFET

Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

文件：458.81 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

丝印：P10N60CAFJ；Package：TO-220FJ-3L；10A, 600V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVFP10N60CAFJ/FJH is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistan

文件：291.74 Kbytes 页数：8 Pages

SILAN

士兰微

丝印：P10N60CAFJ；Package：TO-220FJ-3L；10A, 600V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVFP10N60CAFJ/FJH is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistan

文件：291.75 Kbytes 页数：8 Pages

SILAN

士兰微

丝印：P10N60CAFJ；Package：TO-220FJ-3L；10A, 600V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVFP10N60CAFJ/FJH is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistan

文件：291.72 Kbytes 页数：8 Pages

SILAN

士兰微