Silicon Photo Transistor

Structure 1.1 Chip Size : 0.415mm X 0.415mm 1.2 Chip thickness : 180±15um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 138um X 138um - Base : 70um X 70um

文件：124.63 Kbytes 页数：1 Pages

KODENSHI

可天士

Silicon Photo Transistor

Structure 1.1 Chip Size : 0.46mm X 0.46mm 1.2 Chip thickness : 180±15um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 135um - Base : 70um X 70um

文件：139.32 Kbytes 页数：1 Pages

KODENSHI

可天士

Silicon Photo Transistor

Structure 1.1 Chip Size : 0.60mm X 0.45mm 1.2 Chip thickness : 220±30um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 130um - Base : 60um X 60um

文件：101.41 Kbytes 页数：1 Pages

KODENSHI

可天士

Silicon Photo Transistor

Structure 1.1 Chip Size : 0.61mm X 0.61mm 1.2 Chip thickness : 280±20um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 155um X 155um - Base : 90um X 90um

文件：119.81 Kbytes 页数：1 Pages

KODENSHI

可天士

Silicon Photo Transistor

Structure 1.1 Chip Size : 0.62mm X 0.42mm 1.2 Chip thickness : 220±30um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 160um - Base : 60um X 60um

文件：100.71 Kbytes 页数：1 Pages

KODENSHI

可天士

Silicon Photo Transistor

Structure 1.1 Chip Size : 0.80mm X 0.80mm 1.2 Chip thickness : 280±20um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 140um - Base : 100um X 100um 1.6 Active Area : 0.64mm X 0.64mm

文件：102.15 Kbytes 页数：1 Pages

KODENSHI

可天士

Silicon Photo Transistor

Structure 1.1 Chip Size : 0.42mm X 1.17mm 1.2 Chip thickness : 280±20um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 130um - Base : 60um X 60um 1.6 Active Area : 0.31mm X 0.46mm

文件：104.43 Kbytes 页数：1 Pages

KODENSHI

可天士

PHOTOLOGIC SLOTTED OPTICAL SWITCHES

Description: The OPB120A through OPB123A devices consist of an infrared emitting diode and a Photologic® sensor. Features: • Choice of output configuration • Printed circuit board mounting • 0.080” (2.03 mm) wide slot • 0.275” (6.99 mm) lead spacing • Opaque plastic housing • Low profile

文件：361.78 Kbytes 页数：4 Pages

OPTEK

Silicon Photo Transistor

Structure 1.1 Chip Size : 1.2mm X 0.45mm 1.2 Chip thickness : 230±20um 1.3 Metallization : Top - Al(2um), Bottom - Au 1.4 Back Metal : Au(1,000Å ) 1.5 Passivation : Silicon Nitride 1.6 Bonding Pad Size - Emitter : 130um - Base : 60um X 60um

文件：102.01 Kbytes 页数：1 Pages

KODENSHI

可天士

Photologic Slotted Optical Switch

Description The OPB120 through OPB123 devices consist of an infrared emitng diode and a Photologic® sensor (which is a monolithic integrated circuit that incorporates a linear amplifer and a Schmit Trigger). The OPB120 series have an LED and Photologic® sensor mounted on opposite sides of a 0.080

文件：962.99 Kbytes 页数：7 Pages

TTELEC